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Inferences:

• The Selectivity does not change with an increase in the RF top power.
• Both the SiC etch rate and the photoresist etch rate increase with increase in the RF top power till some value after which they decrease due to CF deposition from the etching species.
• The etch rate of photoresist is twice that of the SiC.

Selectivity: The selectivity (S) of an etch is the ratio of the etch rate of the film to the etch rate of a second film using the same chemistry simultaneously with in the same etch sequence. This second film could be the mask material [4] (like photoresist in this case).